Custom MMIC's New GaN LNA Meets Need For High RF Power Survivability

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD219C4, a new GaN low-noise amplifier, to their standard product catalog.

The CMD219C4 is a broadband MMIC low-noise amplifier fabricated in GaN technology that operates from 4 to 8 GHz with a gain of 22.5 dB, a noise figure of 1.0 dB, and an output 1 dB compression point of +17 dBm. In terms of survivability, the CMD219C4 can withstand RF input power levels of up to 5 Watts without permanent damage. The CMD219C4 is housed in a leadless 4x4 mm ceramic package. 

The CMD219C4 is ideally suited for microwave radios and C-band applications where small size and high input power survivability are needed, such as point-to-point and point-to-multi-point radios, military and space, and test instrumentation. 

To download the full datasheet for the CMD219C4 Low-Noise Amplifier, visit http://custommmic.com/Product-Library/Amplifiers/

About Custom MMIC
Custom MMIC represents a new way of thinking about MMICs. Driven by customer challenges, the company offers both hands-on design through testing services, and a growing library of system-ready designs. They are experienced in GaAs, GaN, SiC, InP, and InGaP HBT and have established relationships with the leading foundries in these technologies. They specialize in RF through millimeter-wave circuits for satellite communications, radar systems, cellular infrastructure, consumer electronics, VSAT, and point-to-point radio systems. For more information, visit www.CustomMMIC.com.