SCHEDULED MAINTENANCE
Synthesis of three-dimensional AlN–Si3N4 branched heterostructures and their photoluminescence properties†
Abstract
The synthesis of heterostructures with branched morphology is of great importance for exploiting novel physical and chemical properties in nanoscience and nanotechnology fields. In this study, by combining the extended vapor–liquid–solid (EVLS) and vapor–solid (VS) growth methods, we successfully fabricate three-dimensional (3D) AlN–Si3N4 branched heterostructures with the core of Si3N4 nanostructures and branched AlN nanocones with adjustable diameter and length. The photoluminescence (PL) spectra of the AlN–Si3N4 branched heterostructures display new emission bands besides those of the as-synthesized Si3N4 nanostructures, which may be ascribed to the emission bands of AlN in the deep- or trap-level state. From these results we propose a general strategy for designing and preparing 3D branched heterostructures for novel optoelectronic devices.
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